Excitonic recombination in GaN grown by molecular beam epitaxy
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منابع مشابه
Band Alignments in InxGa1±xP/GaAs Heterostructures Investigated by Pressure Experiments
InxGa1± xP/GaAs (x 0.541 and 0.427) heterostructures, grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on low temperature substrates, have been characterised by pressure-dependent and time-resolved photoluminescence experiments. The excitonic optical transitions and recombination dynamics are both influenced by the particular band alignments of these systems. The valence band offset has b...
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تاریخ انتشار 2014